• More than 30 years of experience in research of semiconductor materials: fabrication, characterization, and development of related technologies.
• Wide range of scientific interests with an emphasis on the investigation, engineering, and employment of various defects and nanostructures in semiconductors.
• Ability to improve existing material characterization methods and invent new ones.
• More than 120 publications in leading refereed international scientific journals.
• Guest-editor and reviewer for Scientific Journals.
• Contributed more than 75 papers to international conferences on topics related to materials science and physics of semiconductors.
• Organized and chaired international conferences.
• Possess several patents.
Information updated 04.2020
Resume
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Present position: Wiss. Mitarbeiter, Technische Universität Bergakademie Freiberg, till 01.2022
Publications
Click to download a list of my publications.
The list is prepared in chronological order. Several not listed papers were published in national journals (Russian, Georgian and/or Japanese). Upon request, I can send you a copy of the requested paper.
On the right is presented a cover of Physica Status Solidi A journal (vol. 17, 2019) for which a figure from my manuscript was chosen.
Statistics
A slideshow, scroll between graphs, click to enlarge.
Materials/Systems
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Si (a-Si, c-Si, mc-Si, nc-Si, etc.)
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Si-Ge, Ge, C
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III-V, II-VI, dilute nitrades
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HKMG SOI FET
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Thin films, MQW, bonded wafers
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Solar cells, Photonic systems
Experimental methods
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Magneto-resonance methods: ESR, EDMR, ODMR, EDSR, ODCR.
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Electrical methods: DLTS, LDLTS, ODLTS, Hall effect, SPV, TDDB, TZDB, etc.
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Infrared and optical methods: FTIR, RS, PL, PLE
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Microscopy: TEM, HRTEM, AFM, EBIC, CL.
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Mass Spectrometric methods: SSMS, LSMS, SIMS.
My data in professional
networks
2010 - present
2010 - present
Key lectures
Magnetic resonance spectroscopy.
Application of traditional investigation methods for characterization of defecrts related to modern technologies.
Rod-like defects in silicon: signatures of distinct RLD structures detected by various measurement methods.
Deep level transient spectroscopy for photovoltaics.
PL and DLTS measurements on Si-based PV materials and solar cells.
Photoluminescence for photovoltaics.
Lifgt-induced crystallisation for thin silicon films.